Rapid mapping of AR coating thickness on Si solar cells using GT-FabScan 6000

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 943-946

  Sopori, Bhushan ^a   Amieva, Juana ^a   Butterfield, Brian ^a   Li, Chuan ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION (AR) COATING; IMAGE PLANE; RAPID MAPPING;

CHARGE COUPLED DEVICES; COATING TECHNIQUES; IMAGE PROCESSING; SILICON; SILICON WAFERS;

SOLAR CELLS;

EID: 27944467232     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. B. L. Sopori, "Principle of a new reflectometer for measuring dielectric film thickness on substrates of arbitrary characteristics," Rev. Sci. Instrum. 59(5), 1988, p725.
2. Bhushan Sopori, U. S. Patent No. 6,275,295.
3. B. L. Sopori, Y. Zhang, W. Chen, and J. Madjdpour, "Silicon solar cell process monitoring by PV Reflectometer," IEEE PVSC, Anchorage, AK, Sept. 2000.