n-type doping principles for doping CuInSe 2 and CuGaSe 2 with Cl, Br, I, Mg, Zn, and Cd

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 343-346

  Lany, Stephan ^a   Zhao, Yu Jun ^a   Persson, Clas ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CONCENTRATIONS; DIVALENT DOPING; HALOGEN DOPING; SUPERCELL CALCULATIONS;

COPPER COMPOUNDS; DEFECTS; HALOGEN COMPOUNDS; PHOTOVOLTAIC CELLS;

DOPING (ADDITIVES);

EID: 27944463218     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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12. M allowed by rule (2), i.e. maximally dopant rich conditions, lead to undesirable high defect concentrations. Therefore, we use here a slightly lower value (by 0.3 eV for Mg, by 0.2 eV for Zn, Cd).
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