Reliability improvement of high value doped polysilicon-based resistors

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1369-1372

  Carvou, E ^a   Le Bihan, F ^a   Salaun, A C ^a   Rogel, R ^a   Bonnaud, O ^a   Rey Tauriac, Y ^a,b   Gagnard, X ^b   Roland, L ^b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSIONS; POLYCRYSTALLINE MATERIALS; POLYSILICON; RELIABILITY; RESISTORS; SEMICONDUCTOR DOPING; SILICON WAFERS;

DOPED POLYSILICON; ELECTRICAL CHARACTERISTIC; ELECTRICAL RELIABILITY; IN-SITU DOPING; ION IMPLANTATION METHODS; POLYCRYSTALLINE SILICON LAYERS; RELIABILITY IMPROVEMENT; RESISTANCE VALUES;

ION IMPLANTATION;

EID: 27944447200     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00151-8     Document Type: Conference Paper

References (3)

1. M. Sarret, A. Liba, F. Le Bihan, P. Joubert and B. Fortin, "N-type poly crystalline silicon films obtained by crystallization of in situ phophorus-doped amorphous silicon films deposited at low pressure", J. Appl. Phys., vol. 76 (9), pp. 5492-5497, 1994.
2. R. Rogel, M. Sarret, T. Mohammed-Brahim, O. Bonnaud, and J. P. Kleider, "High quality unhydrogenated low-pressure chemical vapor deposited poly crystalline silicon", J. of Non-Crystalline Solids, 266-269, pp.141-145, 2000.
3. N.C.-C. Lu, L Gerzberg, C. Y. Lu, and J. D. Meindl, "Modeling and optimisation of poly crystalline silicon resistors", IEEE Trans. Electron Devices, vol. ED-28, pp. 818-830, 1981.