High efficiency amorphous silicon germanium solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1444-1447

  Liao, X ^a   Du, W ^a   Yang, X ^a   Povolny, H ^a   Xiang, X ^a   Deng, X ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; HYDROGEN; MIRRORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; STAINLESS STEEL; ZINC OXIDE;

ACTIVE-AREA EFFICIENCIES; BACK-REFLECTOR (BR); STAINLESS STEEL SUBSTRATES;

AMORPHOUS SILICON;

EID: 27944434719     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. Yang, A. Banerjee, and S. Guha, Appl. Phys. Lett. 70 2975 (1997).
2. P. Agarwal, H. Povolny, S. Han and X. Deng, "Study of a-SiGe:H Films and n-i-p Devices used in High Efficiency Triple Junction Solar Cells", J. of Non-Cryst. Solids, 2002, pp. 1213-1218.
3. W. Wang, H. Povolny, W. Du, X.B. Liao and X. Deng, Triple-junction a-Si solar cells with heavily doped thin interface layer at the tunnel junction, IEEE-29, pp 1082-1085 (2002)
4. Wenhui Du, Xianbo Liao, Xieshen Yang, Henry Povolny, Xianbi Xiang, Xunming Deng, Hydrogenated Nanocrystalline Silicon p-Layer in a-Si:H n-i-p Solar Cells, to be published.
5. For AMPS, see http://www.psu.edu/dept/AMPS/.
6. X. Liao, Z. Hu, Y. Xu, X. Zeng, H. Hao, H. Diao and X. Xiang Impacts of p-Type Interfaces on Performances of a-Si:H Based Solar Cells, PVSEC-14 Proceedings (2004)