A 20-GHz low-noise amplifier with active Balun in a 0.25-μm SiGe BICMOS technology

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 10, 2005, Pages 2092-2096

  Welch, Brian ^a,b,d   Kornegay, Kevin T ^a,b,e,f,g,h   Park, Hyun Min ^a,c   Laskar, Joy ^a,c,i,j,k  

^a IEEE   (United States)

^b Department of Obstetrics Gynecology   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d SiGe and CMOS Silicon Technologies   (United States)

^e Cornell University   (United States)

^f Cornell Broadband Communications Research Laboratory ^*  (United States)

^g Eta Kappa Nu   (United States)

^h Tau Beta Pi   (United States)

ⁱ GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^j UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^k UNIVERSITY OF HAWAII   (United States)

more..

Author keywords

Balun; High frequency; Low noise amplifier; SiGe

Indexed keywords

BALUN; HIGH FREQUENCY; LOW-NOISE AMPLIFIERS (LNA); SIGE;

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; OPTIMIZATION; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; STRUCTURAL DESIGN;

AMPLIFIERS (ELECTRONIC);

EID: 27844569351     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.854603     Document Type: Conference Paper

References (10)

1. B. Welch, K. Kornegay, H. Park, and J. Laskar, "A 20 GHz low-noise amplifier in a 0.25 μm SiGe BiCMOS technology," in Proc. IEEE Compound Semiconductor Integrated Circuits Symp., Oct. 2004, pp. 141-144.
2. K.-W. Yu, Y. L. Lu, D. Huang, D.-C. Change, V. Liang, and M. F. Chang, "24 GHz low-noise amplifier in 0.18 μm CMOS technology," in Electron. Lett., vol. 39, Oct. 2003, pp. 1559-1560.
3. B. A. Floyd, L. Shi, Y. Taur, I. Lagando, and K. O. Kenneth, "23.8 GHz CMOS tuned amplifier," IEEE Trans. Microw. Theory Tech., vol. 50, no. 9, pp. 2193-2196, Sep. 2002.
4. X. Guan and A. Hajimiri, "A 24-GHz CMOS front-end," IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 368-373, Feb. 2004.
5. S. Reynolds, B. Floyd, U. Pfeiffer, and T. Zwick, "60 GHz transciever circuits in sige bipolar technology," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, vol. 538, 2004, pp. 442-443.
6. M. Rajashekharaiah, P. Upadhyaya, and D. Heo, "A compact 5.6 GHz low-noise amplifier with new on-chip gain controllable active balun," in Proc. IEEE Workshop on Microelectronics, 2004, pp. 131-132.
7. M. Kumarasamy Raja, T. T. Chin Boon, K. Nuntha Kumar, and W. S. Jau, "A fully integrated variable gain 5.75-GHz LNA with on chip active balun for WLAN," in Proc. IEEE Radio Frequency Integrated Circuits Symp., 2003, pp. 439-442.
8. P.R. Gray, P. J. Hurst, S. H. Lewis, and R. G. Meyer, Analysis and Design of Analog Integrated Circuits, 4th ed. New York: Wiley, 2001.
9. B. Razavi, Design of Integrated Circuits for Optical Communications. New York: McGraw-Hill, 2002.
10. B. Razavi, RF Microelectronics. Upper Saddle River, NJ: Prentice Hall PTR, 1998.