Carrier recombination velocities at the SiO2/Si interface investigated by a photo-thermal reflection microscopy

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 345-348

  Ikari, T ^a   Fukuyama, A ^a   Murata, T ^b   Suemitsu, M ^b   Haddad, N ^c   Reita, V ^c   Roger, J P ^c   Fournier, D ^c  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c PSL RESEARCH UNIVERSITY   (France)

Author keywords

Carrier recombination velocity; Photothermal reflection microscopy; SiO2 Si interface

Indexed keywords

CURVE FITTING; DIFFUSION; ETCHING; LIGHT REFLECTION; PUMPS; SAMPLING; SEMICONDUCTOR MATERIALS; SILICON;

CARRIER DIFFUSIVITY; CARRIER RECOMBINATION VELOCITY; PHOTOTHERMAL REFLECTION MICROSCOPY; SIO2/SI INTERFACE;

SILICA;

EID: 27844528328     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.033     Document Type: Conference Paper

References (7)

1. M. Suemitsu, Y. Enta, Y. Takegawa, and N. Miyamoto Appl. Phys. Lett. 77 2000 3179
2. B.C. Forget, and D. Fournier Semiconductors and electronic materials A. Mandelis P. Hess SPIE 2000 199 225 Chapter 7
3. T. Ikari, J.P. Roger, and D. Fournier Rev. Sci. Instrum. 74 2003 553
4. B.C. Forget, I. Barbereau, D. Fournier, S. Tuli, and A.B. Battacharyya Appl. Phys. Lett. 69 1996 1107
5. B.C. Forget, and D. Fournier Mater. Sci. Eng. B24 1994 199
6. M. Nestoros, B.C. Forget, C. Christofides, and A. Seas Phys. Rev. B 51 1995 14115
7. J. Opsal, M. Taylor, W.L. Smith, and A. Rosencwaig J. Appl. Phys. 61 1987 240