Photothermal microscopy of silicon epitaxial layer on silicon substrate with depletion region at the interface

Review of Scientific Instruments

Volumn 74, Issue 1 II, 2003, Pages 553-555

  Ikari, T ^a   Roger, J P ^b   Fournier, D ^b  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b PSL RESEARCH UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); SPECIFIC HEAT; THERMAL DIFFUSION;

PHOTOTHERMAL MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0037280683     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515893     Document Type: Conference Paper

References (4)

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3. B. C. Forget, I. Barbereau, D. Fournier, S. Tuli, and A. B. Battacharyya, Appl. Phys. Lett. 69, 1107 (1996).
4. J. Opsal, M. Tayler, W. L. Smith, and A. Rosencwaig, J. Appl. Phys. 61, 240 (1987).