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Volumn 124-125, Issue SUPPL., 2005, Pages 200-204

Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering

c CNR (Italy)

Author keywords

Amorphised Si layer; Medium energy ion scattering; Solid phase epitaxial regrowth; X ray scattering

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; ION IMPLANTATION; SAMPLING; X RAY SCATTERING;

ANNEALING TEMPERATURES; IMPLANTED SAMPLES; LATTICE RECOVERY; SOLID-PHASE EPITAXIAL REGROWTH;

AMORPHOUS SILICON;

EID: 27844470098 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.091 Document Type: Conference Paper

Times cited : (5)

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