Modifications of the gate material to increase the long-term stability of field effect transistor lambda sensors

Sensor Letters

Volumn 3, Issue 3, 2005, Pages 225-230

  Wingbrant, H ^a   Lunden M ^a   Lloyd Spetz, A ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Cold start sensor; Lambda; Linear; Long term stability; SiC FET

Indexed keywords

EXHAUST GASES; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); PROTECTIVE COATINGS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SPUTTER DEPOSITION;

CATALYTIC METAL FILMS; COLD START SENSOR; FIELD EFFECT TRANSISTOR LAMBDA SENSORS; LONG-TERM STABILITY;

CHEMICAL SENSORS;

EID: 27844444349     PISSN: 1546198X     EISSN: None     Source Type: Journal    
DOI: 10.1166/sl.2005.034     Document Type: Article

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