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Diamond and Related Materials

Volumn 14, Issue 11-12, 2005, Pages 1911-1915

Growth mechanism and properties of the well-aligned-carbon-coated Si nanocones by MPCVD

(4) Chuang, P K a Teng, I J a Wang, W H a Kuo, C T a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Carbon nanotubes (CNTs); Growth mechanism; Microwave plasma chemical vapor deposition (MPCVD); Si nanocones (SNCs)

Indexed keywords

AMORPHOUS MATERIALS; CARBON NANOTUBES; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

GROWTH MECHANISM; H-PLASMA PRETREATMENT; SI NANOCONES (SNC);

SILICON;

EID: 27744559074 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2005.06.042 Document Type: Conference Paper

Times cited : (8)

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