Implementation of perfect-magnetic-coupling ultralow-loss transformer in RFCMOS technology

IEEE Electron Device Letters

Volumn 26, Issue 11, 2005, Pages 832-835

  Lin, Yo Sheng ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Interlaced; Magnetic coupling; Silicon substrate; Stacked; System on chip (SOC); Transformer

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER FACTOR; FEEDBACK AMPLIFIERS; MULTILAYERS; SEMICONDUCTING SILICON; THERMAL EFFECTS; VARIABLE FREQUENCY OSCILLATORS;

INTERLACED STACKED TRANSFORMER STRUCTURE; PERFECT MAGNETIC COUPLING; RADIO FREQUENCY INTEGRATED CIRCUITS; SILICON SUBSTRATE; SYSTEM-ON-CHIP (SOC); ULTRALOW-LOSS TRANSFORMER;

ELECTRIC TRANSFORMERS;

EID: 27744555039     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857720     Document Type: Article

References (14)

1. H. W. Chiu, S. S. Lu, and Y. S. Lin, "A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumption on a thin (20 μm) substrate," IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 813-824, Mar. 2005.
2. J. R. Long, "A low-voltage 5.1-5.8-GHz image-reject down-converter RF IC," IEEE J. Solid-State Circuits, vol. 35, no. 9, pp. 1320-1328, Sep. 2000.
3. T. O. Dickson, M. A. LaCroix, S. Boret, D. Gloria, R. Beekens, and S. P. Voinigescu, "30-100 GHz inductors and transformers for millimeterwave (Bi)CMOS integrated circuits," IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, pp. 123-134, Jan. 2005.
4. C. H. Doan, S. Emami, and A. M. Niknejad, "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005.
5. K. Kwok and H. C. Lyong, "Ultra-low-voltage high-performance CMOS VCOs using transformer feedback," IEEE J. Solid-State Circuits, vol. 40, no. 3, pp. 652-660, Mar. 2005.
6. D. J. Cassan and J. R. Long, "A 1-V transformer-feedback low-noise amplifier for 5-GHz wireless LAN in 0.18 μm CMOS," IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 427-435, Mar. 2003.
7. H. M. Hsu, "Implementation of high-coupling and broad-band transformer in RFCMOS technology," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1-5, Jul. 2005.
8. J. W. Lin, C. C. Chen, and Y. T. Cheng, "A robust high-Q micromachined RF inductor for RFIC applications," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1489-1496, Jul. 2005.
9. Y. S. Lin, H. B. Liang, T. Wang, and S. S. Lu, "MEMS 3-D stacked RF transformers fabricated by 0.18 μm MS/RF CMOS technology with improved power loss and noise figure performances," in Proc. SSDM, Kobe, Japan, 2005, pp. 606-607.
10. B. Razavi, RF Microelectronics. Englewood Cliffs, NJ: Prentice-Hall, 1998, pp. 39-48.
11. A. C. Watson, D. Melendy, P. Francis, K. Hwang, and A. Weisshaar, "A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs," IEEE Trans. Microw. Theory Tech., vol. 52, no. 3, pp. 849-857, Mar. 2004.
12. K. T. Ng, B. Rejaei, and J. N. Burghartz, "Substrate effects in monolithic RF transformers on silicon," IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 377-383, Jan. 2002.
13. T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 2nd ed. Cambridge, U.K.: Cambridge Univ. Press, 2004, pp. 148-158.
14. R. Groves, D. L. Harame, and D. Jadus, "Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/ BiCMOS technology," IEEE J. Solid-State Circuits, vol. 32, no. 9, pp. 1455-1459, Sep. 1997.