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Volumn 312, Issue 2, 2005, Pages 596-619

Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors

Author keywords

Drift diffusion; Energy relaxation time limit; Energy transport; Entropy inequality; Large time behavior

Indexed keywords


EID: 27744532086     PISSN: 0022247X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmaa.2005.03.063     Document Type: Article
Times cited : (14)

References (18)
  • 1
    • 0030537690 scopus 로고    scopus 로고
    • On a hierarchy of macroscopic models for semiconductor
    • N. Ben Abdallah P. Degond On a hierarchy of macroscopic models for semiconductor J. Math. Phys. 37 1996 3333-3383
    • (1996) J. Math. Phys. , vol.37 , pp. 3333-3383
    • Ben Abdallah, N.1    Degond, P.2
  • 2
    • 0030186891 scopus 로고    scopus 로고
    • An energy-transport model for semiconductors derived from the Boltzmann equation
    • N. Ben Abdallah P. Degond S. Génieys An energy-transport model for semiconductors derived from the Boltzmann equation J. Statist. Phys. 84 1996 205-231
    • (1996) J. Statist. Phys. , vol.84 , pp. 205-231
    • Ben Abdallah, N.1    Degond, P.2    Génieys, S.3
  • 3
    • 0026735256 scopus 로고
    • An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
    • D. Chen E. Kan U. Ravaioli C. Shu R. Dutton An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects IEEE Electron Device Lett. 13 1992 26-28
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 26-28
    • Chen, D.1    Kan, E.2    Ravaioli, U.3    Shu, C.4    Dutton, R.5
  • 4
    • 3042608871 scopus 로고    scopus 로고
    • Mixed boundary value problem of stationary energy transport model
    • preprint
    • L. Chen, L. Hsiao, Mixed boundary value problem of stationary energy transport model, preprint
    • Chen, L.1    Hsiao, L.2
  • 5
    • 11144221128 scopus 로고    scopus 로고
    • Strong solution to a kind of cross diffusion parabolic system
    • L. Chen L. Hsiao Y. Li Strong solution to a kind of cross diffusion parabolic system Comm. Math. Sci. 1 2003 799-808
    • (2003) Comm. Math. Sci. , vol.1 , pp. 799-808
    • Chen, L.1    Hsiao, L.2    Li, Y.3
  • 6
    • 0032183027 scopus 로고    scopus 로고
    • A steady-state system in nonequilibrium thermodynamics including thermal and electrical effects
    • P. Degond S. Génieys A. Jüngel A steady-state system in nonequilibrium thermodynamics including thermal and electrical effects Math. Methods Appl. Sci. 21 1998 1399-1413
    • (1998) Math. Methods Appl. Sci. , vol.21 , pp. 1399-1413
    • Degond, P.1    Génieys, S.2    Jüngel, A.3
  • 7
    • 0031521314 scopus 로고    scopus 로고
    • A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
    • P. Degond S. Génieys A. Jüngel A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects J. Math. Pures Appl. 76 1997 991-1015
    • (1997) J. Math. Pures Appl. , vol.76 , pp. 991-1015
    • Degond, P.1    Génieys, S.2    Jüngel, A.3
  • 8
    • 0002021149 scopus 로고    scopus 로고
    • Energy transport model for a non degenerate semiconductor. Convergence of the Hilbert expansion in the linearized case
    • S. Génieys Energy transport model for a non degenerate semiconductor. Convergence of the Hilbert expansion in the linearized case Asymptot. Anal. 17 1998 279-308
    • (1998) Asymptot. Anal. , vol.17 , pp. 279-308
    • Génieys, S.1
  • 9
    • 0032674952 scopus 로고    scopus 로고
    • The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
    • I. Gasser R. Natalini The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors Quart. Appl. Math. 57 1999 269-282
    • (1999) Quart. Appl. Math. , vol.57 , pp. 269-282
    • Gasser, I.1    Natalini, R.2
  • 10
    • 22444454769 scopus 로고    scopus 로고
    • An application of the implicit function theorem to an energy model of the semiconductor theory
    • J.A. Griepentrog An application of the implicit function theorem to an energy model of the semiconductor theory Z. Angew. Math. Mech. 79 1999 43-51
    • (1999) Z. Angew. Math. Mech. , vol.79 , pp. 43-51
    • Griepentrog, J.A.1
  • 12
    • 0034251770 scopus 로고    scopus 로고
    • Regularity and uniqueness of solutions to a parabolic system in nonequilibrium thermodynamics
    • A. Jüngel Regularity and uniqueness of solutions to a parabolic system in nonequilibrium thermodynamics Nonlinear Anal. 41 2000 669-688
    • (2000) Nonlinear Anal. , vol.41 , pp. 669-688
    • Jüngel, A.1
  • 14
    • 24544457978 scopus 로고    scopus 로고
    • Macroscopic models for semiconductor devices. A review
    • preprint
    • A. Jüngel, Macroscopic models for semiconductor devices. A review, preprint
    • Jüngel, A.1
  • 16
    • 27744584807 scopus 로고    scopus 로고
    • Global existence and asymptotic behavior of the solution to 1-D energy transport model for semiconductors
    • Y. Li L. Chen Global existence and asymptotic behavior of the solution to 1-D energy transport model for semiconductors J. Partial Differential Equations 15 4 2002 81-95
    • (2002) J. Partial Differential Equations , vol.15 , Issue.4 , pp. 81-95
    • Li, Y.1    Chen, L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.