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Materials Science and Engineering C

Volumn 25, Issue 5-8, 2005, Pages 691-694

Electronic structure calculations for ZnSxSe1-x

(5) Ben Afia, S a Belmabrouk, H a Said, M a Nasrallah, S Abdi Ben a Bouarissa, N b

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b UNIVERSITY OF M'SILA (Algeria)

Author keywords

Bowing parameter; Compositional and structural disorder; Electron effective mass; Electronic structure

Indexed keywords

ALLOYS; APPROXIMATION THEORY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; SEMICONDUCTOR MATERIALS; STRUCTURE (COMPOSITION);

BOWING PARAMETERS; COMPOSITIONAL AND STRUCTURAL DISORDER; ELECTRON EFFECTIVE MASS; ENERGY BAND GAPS;

ZINC SULFIDE;

EID: 27744489380 PISSN: 09284931 EISSN: None Source Type: Journal
DOI: 10.1016/j.msec.2005.06.024 Document Type: Article

Times cited : (9)

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