Ultra-fast LIGBTs and superjunction devices in membrane technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 267-270

  Udrea, F ^a   Trajkovic, T ^a   Lee, C ^a   Gamer, D ^a   Yuan, X ^a   Joyce, J ^a   Udugampola, N ^a   Bonnet, G ^a   Coulson, D ^a   Jacques, R ^a   Izmajlowicz, M ^a   Van Der Duijn Scheuten, N ^a   Ansari, Z ^a   Moyse, P ^a   Amaratunga, G A J ^a  

^a CamSemi   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ETCHING; INTEGRATED CIRCUITS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SWITCHING;

MEMBRANE TECHNOLOGY; SUPERJUNCTION DEVICES; SWITCHING SPEED; ULTRA-FAST LIGBT;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27744455730     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. F. Udrea and G. Amaratunga, US parent 6,703,684 (filed Sept 2000, granted 2004).
2. F. Udrea and G. A. J. Amaratunga, US Patent 6, 566, 240.
3. F. Udrea, T Trajkovic and G. A. J. Amaratunga, "Membrane High Voltage Devices - A Milestone Concept in Power ICs", IEDM 2005, p451-454.
4. Nakagawa A. et al., "Prospects of High Voltage Power ICs on thin SOI", IEDM Tech Dig., p. 229, (1992).
5. Merchant S. et al., "Realization of high breakdown voltage (>700 V) in thin SOI devices", ISPSD'91 p.31, 1991
6. T. Letavic et al., ISPSD'01, p. 49,2001.
7. B. Murari, F. Bertotti, G.A. Vignola (Eds.) "Smart Power ICs", Springer-Verlag, 2002.
8. T. Fujihara and Y. Miyasaka, "Simulated Performances of Semiconductor Superjunction Devices", ISPSD98 p. 423
9. G. Deboy et al "A new generation of high Voltage MOSFETs breaks the limit of silicon", IEDM, p.683, 1998