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Journal of Magnetism and Magnetic Materials

Volumn 298, Issue 1, 2006, Pages 48-55

Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

(8) Wang, L M a Lee, Jyh Yi a Yang, H C b Chen, J C b Liu, Hsiang Lin c Lu, Kun Sheng c Horng, Lance d Horng, H E c

a DA YEH UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

d NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

Author keywords

Magnetic properties of thin films; Magnetic thin film devices; Tunneling

Indexed keywords

GRAIN BOUNDARIES; LANTHANUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETIC THIN FILM DEVICES; MAGNETIC THIN FILMS; SEMICONDUCTOR JUNCTIONS; STRONTIUM COMPOUNDS; SUBSTRATES;

ANGULAR DEPENDENCE; MAGNETIC PROPERTIES OF THIN FILMS; STEP-EDGE JUNCTIONS; TUNNELING;

MAGNETORESISTANCE;

EID: 27744446276 PISSN: 03048853 EISSN: None Source Type: Journal
DOI: 10.1016/j.jmmm.2005.03.005 Document Type: Article

Times cited : (2)

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