Room-temperature tunneling magnetoresistance in La0.7Sr 0.3MnO3 step-edge junctions

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4928-4933

  Wang, L M ^a   Liu, Chen Chung ^a   Yang, H C ^b   Horng, H E ^c  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; GOLD; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MAGNETIZATION; MAGNETORESISTANCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR JUNCTIONS; THIN FILMS;

SPIN POLARIZATION; STEP-EDGE JUNCTIONS; SURFACE BOUNDARY; TUNNELING MAGNETORESISTANCE (TMR);

LANTHANUM COMPOUNDS;

EID: 2442619282     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687994     Document Type: Article

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