SCOPUS 정보 검색 플랫폼

Radiation Measurements

Volumn 40, Issue 2-6, 2005, Pages 731-735

Etching microscopic defects in polycarbonate due to high dose ArF or KrF laser exposure

(5) Jaleh, B b Parvin, P a,c Katoozi, M d Zamani, Z c Zare, A c

a AMIRKABIR UNIVERSITY OF TECHNOLOGY (Iran)

b BU ALI SINA UNIVERSITY (Iran)

c ATOMIC ENERGY ORGANIZATION OF IRAN (Iran)

d National Radiation Protection Department Iran (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL LASERS; DOSIMETRY; ETCHING; EXCIMER LASERS; EXPOSURE CONTROLS; LASER THEORY; MORPHOLOGY; POLYCARBONATES; POLYMERS; ULTRAVIOLET RADIATION;

ELECTROCHEMICAL ETCHING (ECE); NUCLEAR PARTICLES; POLYMER SURFACE; PULSE REPETITION RATES (PRR);

CRYSTAL DEFECTS;

EID: 27744441627 PISSN: 13504487 EISSN: None Source Type: Journal
DOI: 10.1016/j.radmeas.2005.06.035 Document Type: Conference Paper

Times cited : (23)

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