SCOPUS 정보 검색 플랫폼

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 967-970

Detailed analysis of IMD in an LDMOS RF power amplifier

(2) Aikio, Janne P a,b Rahkonen, Timo a,b

a IEEE (Finland)

b UNIVERSITY OF OULU (Finland)

Author keywords

Distortion analysis; Harmonic balance; Polynomial device model; RF power amplifier; Volterra analysis

Indexed keywords

DISTORTION ANALYSIS; HARMONIC-BALANCE; POLYNOMIAL DEVICE MODEL; RF POWER AMPLIFIER; VOLTERRA ANALYSIS;

BANDWIDTH; COMPUTER SIMULATION; DISTORTION (WAVES); HARMONIC DISTORTION; MATHEMATICAL MODELS; POLYNOMIALS; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS;

INTERMODULATION;

EID: 27644582684 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/MWSYM.2005.1516788 Document Type: Conference Paper

Times cited : (3)

References (8)

1
- 0036904326
- Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
- Dec.
- C. Fager J. C. Pedro, N. B. de Carvalho, H. Zirath, "Prediction of IMD in LDMOS transistor Amplifiers Using a New Large-Signal Model." IEEE Trans. Microwave Theory and Tech., vol. 50, no. 12, pp. 2834-2842Dec. 2002.
- (2002) IEEE Trans. Microwave Theory and Tech. , vol.50 , Issue.12 , pp. 2834-2842
- Fager, C.¹ Pedro, J.C.² De Carvalho, N.B.³ Zirath, H.⁴

2
- 0742286340
- A comprehensive analysis of IMD behaviour in RF CMOS power amplifiers
- Jan.
- C. Fager J. C. Pedro, N. B. de Carvalho, H. Zirath, F. Fortes, M. J. Rosario, "A Comprehensive Analysis of IMD Behaviour in RF CMOS Power Amplifiers." IEEE J. Solid-State Circuits, vol. 39, no. 1, Jan. 2004.
- (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.1
- Fager, C.¹ Pedro, J.C.² De Carvalho, N.B.³ Zirath, H.⁴ Fortes, F.⁵ Rosario, M.J.⁶

3
- 27644505470
- Fitting of polynomial device model based on large-signal voltage and current spectra
- Nov.
- J. P. Aikio, T. Rahkonen, "Fitting of polynomial device model based on large-signal voltage and current spectra." in Proc. IEEE NORCHIP Conf. pp. 72-75, Nov. 2003.
- (2003) Proc. IEEE NORCHIP Conf. , pp. 72-75
- Aikio, J.P.¹ Rahkonen, T.²

4
- 4344718893
- Fitting of 2-dimensional polynomial device model based on simulated voltage and current spectra
- May
- J. P. Aikio, T. Rahkonen, "Fitting of 2-dimensional polynomial device model based on simulated voltage and current spectra." in Proc. IEEE Int. Symp. Circuit and Systems. Vol. 4, pp. 645-648, May 2004.
- (2004) Proc. IEEE Int. Symp. Circuit and Systems , vol.4 , pp. 645-648
- Aikio, J.P.¹ Rahkonen, T.²

5
- 27644578014
- Detailed distortion analysis technique based on simulated large-signal voltage and current spectra
- Submitted
- J. P. Aikio, T. Rahkonen, "Detailed Distortion analysis Technique Based on Simulated Large-Signal Voltage and Current Spectra." Submitted to IEEE Trans. Microwave Theory and Tech.
- IEEE Trans. Microwave Theory and Tech.
- Aikio, J.P.¹ Rahkonen, T.²

6
- 0033364141
- A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FET's
- W. R. Curtice, J. A. Pla, D. Bridges, T. Liang, E. E. Shumate, "A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FET's." 1999 IEEE MTT-S Int. Microwave Symp. Dig, vol. 2, pp. 419-422.
- 1999 IEEE MTT-S Int. Microwave Symp. Dig , vol.2 , pp. 419-422
- Curtice, W.R.¹ Pla, J.A.² Bridges, D.³ Liang, T.⁴ Shumate, E.E.⁵

7
- 84859292387
- APLAC circuit simulator at http://www.aplac.com.
- APLAC Circuit Simulator

8
- 84859279159
- Freescale's MRF21030 LDMOS power transistor data sheet at http://www.freescale.com/files/rf_if/doc/data_sheet/MRF21030.pdf
- Freescale's MRF21030 LDMOS Power Transistor Data Sheet

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