Electronic states of Ga3Si, GaSi3, and their ions

Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy

Volumn 62, Issue 1-3, 2005, Pages 596-603

  Zhu, Xiaolei ^a,b  

^a NANJING NORMAL UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

Ab initio calculation; Electronic state; Jahn Teller distortion

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; IONIZATION;

AB INITIO CALCULATIONS; COMPLEX ACTIVE SPACE SELF-CONZSISTENT-FIELD (CASSCF); ELECTRONIC STATES; JAHN-TELLER DISTORTIOB;

GALLIUM COMPOUNDS;

GALLIUM; GALLIUM SILICIDE GA3SI; GALLIUM SILICIDE GAS3; SILICON; SILICON DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; ELECTROCHEMISTRY; REPRODUCIBILITY;

ELECTROCHEMISTRY; GALLIUM; MODELS, MOLECULAR; MOLECULAR CONFORMATION; REPRODUCIBILITY OF RESULTS; SILICON; SILICON COMPOUNDS;

EID: 27644489793     PISSN: 13861425     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.saa.2004.12.053     Document Type: Article

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