Study on nitrogen doped Ge 2Sb 2Te 5 films for phase change memory

Journal of Materials Science

Volumn 40, Issue 6, 2005, Pages 1543-1545

  Shin, Min Jung ^a   Kim, Suk Min ^a   Choi, Doo Jin ^a   Lee, Kye Nam ^b   Hong, Suk Kyoung ^b   Park, Young Jin ^b  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZED FILMS; NITROGEN-DOPED FILMS; SHEET RESISTANCE;

ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); GERMANIUM COMPOUNDS; NITROGEN;

SEMICONDUCTING FILMS;

EID: 27544507774     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-005-0600-4     Document Type: Conference Paper

References (7)

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