A contour-lithography method for rapid and precise deep-etched nano-mems structure fabrication

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 2, Issue , 2005, Pages 1449-1452

  Kubota, Masanori ^a   Mita, Yoshio ^a   Ito, Kota ^a   Marty, Frédéric ^b   Bourouina, Tarik ^b   Shibata, Tadashi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b National Centre of Scientific Research   (France)

Author keywords

Contour Lithography; DRIE; Nano MEMS

Indexed keywords

CONTOUR-LITHOGRAPHY METHOD; DEEP REACTIVE ION ETCHING (DRIE); NANO-MEMS; TWO-STEP ETCHING METHOD;

ASPECT RATIO; ETCHING; MICROELECTROMECHANICAL DEVICES; NANOSTRUCTURED MATERIALS; OPTICAL FILTERS; OPTIMIZATION; REACTIVE ION ETCHING; THROUGHPUT;

ELECTRON BEAM LITHOGRAPHY;

EID: 27544499336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1497355     Document Type: Conference Paper

References (3)

1. J. Yeom, Y. Wu, and M. A. Shannon, "Critical Aspect Ratio Dependence in Deep Reactive Ion Etching of Silicon," in The 12th International Conference on Solid-Stafe Sensors, Actuators and Microsystem (Transducers '03), vol. 2, Boston, U.S.A., June 2003, pp. 1631-1634.
2. J. Karttunen and J. Kiihamäki, "Loading effect in deep silicon etching," in SPIE, vol. 4174, Santa Clara, September 2000, pp. 90-987.
3. F. Marty, L. Rousseau, B. Saadany, B. Mercier, O. Francais, Y. Mita, and T. Bourouina, "Advanced Silicon Etching Techniques Based on Deep Reactive Ion Etching (DRIE) for Silicon HARMS and 3D Micro- and Nano-Structures," in ASME European Micro and Nano Systems (EMN04), Paris, France, October 2004, pp. 25-28.