Study of intermixing in InGaAs/(Al)GaAs quantum well and quantum dot structures for optoelectronic/ photonic integration

IEE Proceedings: Circuits, Devices and Systems

Volumn 152, Issue 5, 2005, Pages 491-496

  Fu, L ^a   Lever, P ^a   Tan, H H ^a   Jagadish, C ^a   Reece, P ^b   Gal, M ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DOSIMETRY; IMPURITIES; ION IMPLANTATION; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

INTERMIXING; PHOTONIC INTEGRATION; THERMAL INTERDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27544455783     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20045053     Document Type: Conference Paper

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