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Volumn 2, Issue 6, 2005, Pages 1958-1962
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Precipitation and extended defect formation in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL LATTICES;
MATHEMATICAL MODELS;
NUCLEATION;
OXYGEN;
POINT DEFECTS;
PRECIPITATION (CHEMICAL);
STACKING FAULTS;
DEFECT FORMATION;
LATTICE DEFECTS;
OXYGEN PRECIPITATION;
PRECIPITATED PHASE;
SEMICONDUCTING SILICON;
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EID: 27444447123
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200460536 Document Type: Conference Paper |
Times cited : (2)
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References (10)
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