|
Volumn 2, Issue 3, 2005, Pages 1056-1059
|
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
LIGHT EMISSION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
DOPED SAMPLES;
LIGHT EMISSION INTENSITY;
N-TYPE DOPING;
QUANTUM WELL STRUCTURES;
SEMICONDUCTOR DOPING;
|
EID: 27344451093
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200460619 Document Type: Conference Paper |
Times cited : (4)
|
References (10)
|