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Volumn 2, Issue 3, 2005, Pages 1056-1059

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT EMISSION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 27344451093     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460619     Document Type: Conference Paper
Times cited : (4)

References (10)
  • 10
    • 27344442327 scopus 로고    scopus 로고
    • PhD Thesis, Vilnius University
    • K. Kazlauskas, PhD Thesis, Vilnius University, 2004.
    • (2004)
    • Kazlauskas, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.