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Volumn 87, Issue 18, 2005, Pages 1-3

Electronic structure and optoelectronic properties of strained InAsSbGaSb multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRONIC STRUCTURE; OPTOELECTRONIC DEVICES; PERTURBATION TECHNIQUES; PHOTOCURRENTS; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER CONFINEMENT; QUANTUM-CONFINED OPTICAL TRANSITION; QUANTUM-WELL SYSTEM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27344449193 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2125126 Document Type: Article

Times cited : (2)

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