A 3.5GHz fully integrated power amplifier module

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 111-114

  Blount, P ^a   Cuggino, J ^a   McPhee, J ^a  

^a Hittite Microwave Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS;

BALL GRID ARRAYS (BGA);

POWER AMPLIFIERS;

EID: 0035162736     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. A 3.5W HBT MMIC Power Amplifier Module for Mobile Communications
2. 0.1 cc 60% efficiency power amplifier multi-chip modules for personal digital cellular phones
3. A novel design concept for a super compact power amplifier module using a multilayer substrate
4. High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsets
5. An L-band high efficiency and low distoration power amplifier module using an HPF/LPF combined interstage matching circuit
6. A low cost, 3-7GHz, 1/2Watt MMIC GaAs amplifier
7. A compact S-band MMIC high power amplifier module
8. 4-8GHz high power cascadable packaged GaAs FET amplifier
9. High performance L-band ball grid array power and receive amplifier module set for satellite phone handsets