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Volumn 17, Issue 10, 2005, Pages 2035-2037

1.3-W ripple-free superluminescent diode

Author keywords

Optoelectronic devices; Semiconductor device modeling; Superluminescent diodes (SLDs)

Indexed keywords

LUMINESCENCE; LUMINESCENT DEVICES; MULTIMODE FIBERS; OPTICAL FIBER COUPLING; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

EID: 26844569136     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.853027     Document Type: Article
Times cited : (18)

References (8)
  • 1
    • 0024700231 scopus 로고
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    • I. M. Joindot and C. Y. Boisrobert, "Peculiar features of InGaAsP DH superluminescent diodes," IEEE J. Quantum Electron., vol. 25, no. 7, pp. 1659-1665, Jul. 1989.
    • (1989) IEEE J. Quantum Electron. , vol.25 , Issue.7 , pp. 1659-1665
    • Joindot, I.M.1    Boisrobert, C.Y.2
  • 2
    • 0020542071 scopus 로고
    • "Lateral confinement InGaAsP superluminescent diode at 1.3 microns"
    • Jan.
    • I. P. Kaminow, G. Eisenstein, L. W. Stultz, and A. G. Dentai, "Lateral confinement InGaAsP superluminescent diode at 1.3 microns," IEEE J. Quantum Electron., vol. 19, no. 1, pp. 78-82, Jan. 1983.
    • (1983) IEEE J. Quantum Electron. , vol.19 , Issue.1 , pp. 78-82
    • Kaminow, I.P.1    Eisenstein, G.2    Stultz, L.W.3    Dentai, A.G.4
  • 3
    • 0033317758 scopus 로고    scopus 로고
    • "High power GaInAsP/InP strained quantum well superluminescent diode with tapered active region"
    • Sep.
    • T. Yamatoya, S. Mori, F. Koyama, and K. Iga, "High power GaInAsP/InP strained quantum well superluminescent diode with tapered active region," Jpn. J. Appl. Phys., vol. 38, no. 9A, p. 5121, Sep. 1999.
    • (1999) Jpn. J. Appl. Phys. , vol.38 , Issue.9 A , pp. 5121
    • Yamatoya, T.1    Mori, S.2    Koyama, F.3    Iga, K.4
  • 5
    • 0031559286 scopus 로고    scopus 로고
    • "High power tapered superluminescent diodes using novel etched deflectors"
    • May
    • I. Middlemast, J. Sarma, and S. Yunus, "High power tapered superluminescent diodes using novel etched deflectors," Electron. Lett., vol. 33, no. 10, pp. 903-904, May. 997.
    • (1997) Electron. Lett. , vol.33 , Issue.10 , pp. 903-904
    • Middlemast, I.1    Sarma, J.2    Yunus, S.3
  • 6
    • 0042232224 scopus 로고    scopus 로고
    • "A realistic model for the output beam profile of stripe and tapered superluminescent LEDs"
    • Jul.
    • F. Causa and J. Sarma, "A realistic model for the output beam profile of stripe and tapered superluminescent LEDs," Appl. Opt., vol. 42, no. 21, pp. 4341-4348, Jul. 2003.
    • (2003) Appl. Opt. , vol.42 , Issue.21 , pp. 4341-4348
    • Causa, F.1    Sarma, J.2
  • 7
    • 0031356405 scopus 로고    scopus 로고
    • "High power superluminescent diodes for multi-wavelength light source"
    • Paper TuY2
    • F. Koyama, "High power superluminescent diodes for multi-wavelength light source," in IEEE LEOS Annu. Meeting, 1997, Paper TuY2, pp. 333-334.
    • (1997) IEEE LEOS Annu. Meeting , pp. 333-334
    • Koyama, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.