HRTEM characterization of 6H-15R polytype boundaries in silicon carbide grown by physical vapor transport

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 655-660

  Sanchez, E K ^a   De Graef, M ^a   Qian, W ^a   Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRONIC PROPERTIES; ENERGY GAP; GRAIN BOUNDARIES; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

PHYSICAL VAPOR TRANSPORT; POLYTYPE BOUNDARIES;

SILICON CARBIDE;

EID: 0030687806     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)