Dielectric properties of thallium gallium diselenide layered crystal in the incommensurate phase

Crystal Research and Technology

Volumn 40, Issue 9, 2005, Pages 901-904

  Senturk E ^a   Tumbek L ^b   Mikailov, F A ^b,c  

^a SAKARYA UNIVERSITY   (Turkey)

^b GEBZE TECHNICAL UNIVERSITY   (Turkey)

^c INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Annealing; Ferroelectrics; Memory effect; Phase transitions; Pinning effect

Indexed keywords

ANNEALING; DIELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM COMPOUNDS; THALLIUM COMPOUNDS; THERMAL EFFECTS;

ANNEALING TEMPERATURE; LATTICE INHOMOGENEITIES; MEMORY EFFECT; PINNING EFFECT;

CRYSTALS;

EID: 26044483294     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410455     Document Type: Article

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