Thermal hysteresis and memory effects in TlInS2

Phase Transitions

Volumn 67, Issue 2, 1998, Pages 457-465

  Allakhverdiev, K R ^a,b   Mikailov, F A ^a,b   Kulibekov, A M ^a,c   Turetken N ^d  

^a MATERIALS INSTITUTE   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

^c AZERBAIJAN UNIVERSITY OF ARCHITECTURE AND CONSTRUCTION   (Azerbaijan)

^d ABANT IZZET BAYSAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HYSTERESIS; PHASE TRANSITIONS; SEMICONDUCTING INDIUM COMPOUNDS;

THERMAL MEMORY EFFECT;

FERROELECTRIC MATERIALS;

EID: 0032269417     PISSN: 01411594     EISSN: None     Source Type: Journal    
DOI: 10.1080/01411599808228753     Document Type: Article

References (12)

1. 2 crystals. Solid State Commun., 96, 827.
2. 4. Phys. Rev. B, 29, 1508.
3. 4 incommensurate ferroelectric compounds. Phys. Rev. B, 38, 5055.
4. 4. J. Phys. C: Solid State Phys., 16, 5009.
5. 2 with incommensurate phase. Solid State Commun., 96, 821.
6. 2 with incommensurate phase. Solid State Commun., 98, 385.
7. 2. Solid State Commun., 101, 309.
8. 2 crystal. Ferroelectrics, 131, 163.
9. Strukov, B.A. (1987) Anomalous hysteresis effects near codimensional-noncodimensional phase transitions. Bulletin of the Academv of Sciences of the USSR. Physical Series, 51, 48.
10. 2 crystal. Fizika Tverdogo Tela (in Russian), 35, 348.
11. 2 crystal. JETP Letters, 39, 291.
12. 2 crystal. Sov. Phys. Solid State, 25, 2061.