Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1031-1035

  Sobolev, N A ^a   Emel'yanov, A M ^a   Shek, E I ^a   Vdovin, V I ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Institute for Chemical Problems of Microelectronics   (Russian Federation)

Author keywords

Electroluminescence; Extended defects; Light emitting diodes; Silicon

Indexed keywords

ANNEALING; CHARGE CARRIERS; CORRELATION METHODS; ELECTROLUMINESCENCE; ION IMPLANTATION; LIGHT ABSORPTION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RADIATION; SILICON;

EXTENDED DEFECTS; QUANTUM YIELDS;

LIGHT EMITTING DIODES;

EID: 0347946852     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.206     Document Type: Conference Paper

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