Propagation of spin-polarized electrons through interfaces separating differently doped semiconductor regions

Proceedings of the IEEE Conference on Nanotechnology

Volumn 1, Issue , 2003, Pages 168-170

  Pershin, Y V ^a   Privman, V ^a  

^a Wallace H Coulter School of Engineering   (United States)

Author keywords

Electron mobility; Magnetoelectronics; Nonuniform electric fields; Physics; Polarization; Quantum computing; Semiconductor device doping; Semiconductor devices; Semiconductor materials; Semiconductor process modeling

Indexed keywords

ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; ELECTROSPINNING; INTERFACES (MATERIALS); MAGNETIC MOMENTS; MAGNETOELECTRONICS; NANOTECHNOLOGY; PHYSICS; POLARIZATION; QUANTUM COMPUTERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SPIN POLARIZATION;

DRIFT DIFFUSION TRANSPORT; ELECTRIC FIELD DISTRIBUTIONS; ELECTRON SPIN POLARIZATION; NONUNIFORM ELECTRIC FIELD; QUANTUM COMPUTING; SEMICONDUCTOR DEVICE DOPING; SEMICONDUCTOR PROCESS MODELING; SPIN-POLARIZED ELECTRONS;

SEMICONDUCTOR DEVICES;

EID: 25844492148     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231742     Document Type: Conference Paper

References (29)

1. S. Datta, B. Das, Appl. Phys. Lett. vol. 56, p. 665, 1990.
2. B. E. Kane, L. N. Pfeiffer, K. W. West, Phys. Rev. B vol. 46, p. 7264, 1992.
3. M. Johnson, Science vol. 260, p. 320, 1993.
4. M. E. Flatte, G. Vignale, Appl. Phys. Lett. vol. 78, p. 1273, 2001.
5. I. Zutic, J. Fabian, S. Das Sarma, Appl. Phys. Lett. vol. 79, p. 1558, 2001.
6. C. Ciuti, J. P. McGuire, L. J. Sham, Appl. Phys. Lett. vol. 81, p. 4781, 2002.
7. T. Koga, J. Nitta, H. Takayanagi, Phys. Rev. Lett. vol. 88, p. 126601, 2002.
8. X. F. Wang, P. Vasilopoulos, F. M. Peeters, Phys. Rev. B vol. 65, p. 165217, 2002.
9. R. G. Mani, W. B. Johnson, V. Narayanamurti, V. Privman, Y.-H. Zhang, Physica E vol. 12, p. 152, 2002.
10. J. Schliemann, J. C. Egues, D. Loss, Phys. Rev. Lett. vol. 90, p. 146801, 2003.
11. I. Žutić, J. Fabian, S. Das Sarma, Phys. Rev. B vol. 66, p. 165301, 2002.
12. G. Prinz, Science vol. 282, p. 1660, 1998.
13. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, D. M. Treger, Science vol. 294, p. 1488, 2001.
14. S. Das Sarma, J. Fabian, X. Hu, I. Zutic, IEEE Trans. Magn. vol. 36, p. 2821, 2000.
15. S. Das Sarma, Am. Sci. vol. 89, p. 516, 2001.
16. D. D. Awschalom, M. E. Flatte, N. Samarth, Sci. Am. vol. 286, p. 66, 2002.
17. S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley & Sons, 1985).
18. J. T. Olesberg, W. H. Lau, M. E. Flatté, C. Yu, E. Altunkaya, E. M. Shaw, T. C. Hasenberg, T. F. Boggess, Phys. Rev. B vol. 64, p. 201301, 2001.
19. Yu. V. Pershin, V. Privman, Phys. Rev. Lett, in press, 2003.
20. S. F. Alvardo, P. Renaud, Phys. Rev. Lett. vol. 68, p. 1387, 1992.
21. S. F. Alvardo, Phys. Rev. Lett. vol. 75, p. 513, 1995.
22. J. M. Kikkawa, D. D. Awschalom, Phys. Rev. Lett. vol. 80, p. 4313, 1998.
23. J. M. Kikkawa, D. D. Awschalom, Nature vol. 397, p. 139, 1999.
24. D. Hägele, M. Oestreich, W. W. Rühle, N. Nestle, K. Eberl, Appl. Phys. Lett. vol. 73, p. 1580, 1998.
25. J. Nitta,T. Akazaki, H. Takayanagi, T. Enoki, Phys. Rev. Lett. vol. 78, p. 1336, 1997.
26. G. Meir, T. Matsuyama, U. Merkt, Phys. Rev. B vol. 65, p. 125327, 2002.
27. Yu. V. Pershin, V. Privman, Nano Lett., in press, 2003.
28. Z. G. Yu, M. E. Flatté, Phys. Rev. B vol. 66, p. 235302, 2002.
29. Z. G. Yu, M. E. Flatté, Phys. Rev. B vol. 66, p. 201202, 2002.