Current crowding effects in SOI-SiGe HBT's with low doped emitters

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 303-306

  Hall, S ^a   Buiu, O ^a   Lamb, A C ^a   El Mubarek, H A W ^b   Ashburn, P ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CROWDING EFFECT;

EID: 25844433933     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256874     Document Type: Conference Paper

References (5)

1. Hall et al, Microelectron. Eng., 59, 449-454 (2001)
2. Schiz et al, IEEE TED, 48(11), 2492-2499 (2001)
3. Peter et al, Proc. ESSDERC, 716 (1999)
4. Ning et al, IEEE TED., 31 (4), 409 (1984)
5. Gamble et al, Solid State Electron., 45(4) 551 (2001)