THz-emitter based on ballistic transport in nano-pin diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 6, 2005, Pages 965-969

  Renner, F ^a   Eckardt, M ^a   Schwanhausser A ^a   Klar, O ^a   Malzer, S ^a,d   Dohler G H ^a,d   Loata, G ^b   Loffler T ^b   Roskos, H ^b   Hanson, M ^c   Driscoll, D ^c   Gossard, A C ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b GOETHE UNIVERSITY   (Germany)

^c University of California   (United States)

^d INTERNATIONAL MAX PLANCK RESEARCH SCHOOL FOR OPTICS AND IMAGING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORT; NANO-PIN DIODES; PIN-PHOTOMIXERS;

CAPACITANCE; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS;

DIODES;

EID: 25444500725     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460706     Document Type: Conference Paper

References (6)

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4. M. Eckardt et al., Physica E 17, 629 (2003).
5. G. Döhler et al., Special Issue J. Semicond. Sci. Technol. "THz", in press (2004-5).
6. P. Pohl et al., Appl. Phys. Lett. 83(19), 4035 (2003).