THz-emitter based on ballistic transport in nano-pin diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 6, 2005, Pages 965-969

  Renner, F ^a   Eckardt, M ^a   Schwanhausser A ^a   Klar, O ^a   Malzer, S ^a,d   Dohler G H ^a,d   Loata, G ^b   Loffler T ^b   Roskos, H ^b   Hanson, M ^c   Driscoll, D ^c   Gossard, A C ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b GOETHE UNIVERSITY   (Germany)

^c Santa Barbara   (United States)

^d INTERNATIONAL MAX PLANCK RESEARCH SCHOOL FOR OPTICS AND IMAGING   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORT; NANO-PIN DIODES; PIN-PHOTOMIXERS;

CAPACITANCE; NANOTECHNOLOGY; SEMICONDUCTOR MATERIALS;

DIODES;

EID: 25444500725     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460706     Document Type: Conference Paper

References (6)

1. E. R. Brown et al., QELS '95, Vol. 16, Technical Digest Series Conf. Edition (1995).
2. H. Ito et al., Electron. Lett. 38(17), 989 (2002).
3. E. R. Brown, Int. J. High Speed Electron. Syst. 13(2), 497 (2003).
4. M. Eckardt et al., Physica E 17, 629 (2003).
5. G. Döhler et al., Special Issue J. Semicond. Sci. Technol. "THz", in press (2004-5).
6. P. Pohl et al., Appl. Phys. Lett. 83(19), 4035 (2003).