SCOPUS 정보 검색 플랫폼

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 665-670

Assessment of layer composition and thickness in AlGaN/GaN HEMT structures by spectroscopic ellipsometry

(4) Baeumler, M a Muller S a Kohler K a Wagner, J a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP ENERGY; LAYER COMPOSITION; PSEUDODIELECTRIC FUNCTIONS; SPECTROSCOPIC ELLIPSOMETRY (SE);

COMPOSITION; ELLIPSOMETRY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PARAMETRIC OSCILLATORS; SAPPHIRE; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; THICKNESS MEASUREMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444460140 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200460470 Document Type: Conference Paper

Times cited : (3)

References (10)

1
- 25444437829
- (Wiley-VCH, Weinheim,) and references therein
- H. Morkoc and L. Liu, in: Nitride Semiconductors (Wiley-VCH, Weinheim, 2003), pp. 547-626 and references therein.
- (2003) Nitride Semiconductors , pp. 547-626
- Morkoc, H.¹ Liu, L.²

2
- 0346885838
- R. Kiefer, R. Quay, S. Müller, T. Feltgen, B. Raynor, J. Schleife, K. Köhler, H. Massler, S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, and G. Weimann, phys. stat. sol. (a) 200, 191 (2003).
- (2003) Phys. Stat. Sol. (a) , vol.200 , pp. 191
- Kiefer, R.¹ Quay, R.² Müller, S.³ Feltgen, T.⁴ Raynor, B.⁵ Schleife, J.⁶ Köhler, K.⁷ Massler, H.⁸ Ramberger, S.⁹ Van Raay, F.¹⁰ Tessmann, A.¹¹ Mikulla, M.¹² Weimann, G.¹³

3
- 84857444341
- K. Köhler, S. Müller, N. Rollbühler, R. Kiefer, R. Quay, and G. Weimann, Inst. Phys. Conf. Ser. 174, 235 (2002).
- (2002) Inst. Phys. Conf. Ser. , vol.174 , pp. 235
- Köhler, K.¹ Müller, S.² Rollbühler, N.³ Kiefer, R.⁴ Quay, R.⁵ Weimann, G.⁶

4
- 0001590229
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittmer, L.¹⁰ Stutzmann, M.¹¹ Rieger, W.¹² Hilsenbeck, J.¹³

5
- 0000644435
- J. Wagner, H. Obloh, M. Kunzer, M. Maier, K. Köhler, and B. Jobs, J. Appl. Phys. 89, 2779 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 2779
- Wagner, J.¹ Obloh, H.² Kunzer, M.³ Maier, M.⁴ Köhler, K.⁵ Jobs, B.⁶

6
- 85087238279
- J. Wagner, A. Ramakrishnan, H. Obloh, M. Kunzer, K. Köhler, and B. Jobs, MRS Internet J. Nitride Semicond. Res. 5S1, W11.54 (2000).
- (2000) MRS Internet J. Nitride Semicond. Res. , vol.5 S1
- Wagner, J.¹ Ramakrishnan, A.² Obloh, H.³ Kunzer, M.⁴ Köhler, K.⁵ Jobs, B.⁶

7
- 25444514084
- For a list of references see Ref. [5]
- For a list of references see Ref. [5].

8
- 25444431570
- US Patent #5,796,983, Dielectric function parametric model, and method of use 18 August
- US Patent #5,796,983, Dielectric function parametric model, and method of use (18 August 1998).
- (1998)

9
- 36549091170
- Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Askasaki, J. Appl. Phys. 61, 4540 (1987).
- (1987) J. Appl. Phys. , vol.61 , pp. 4540
- Koide, Y.¹ Itoh, H.² Khan, M.R.H.³ Hiramatu, K.⁴ Sawaki, N.⁵ Askasaki, I.⁶

10
- 36449001748
- C. M. Herzinger, P. G. Synder, B. Johs, and J. A. Woollam, J. Appl. Phys. 77, 1715 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 1715
- Herzinger, C.M.¹ Synder, P.G.² Johs, B.³ Woollam, J.A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.