Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 814-817

  Moran, D A J ^a   Boyd, E ^a   Elgaid, K ^a   McEwan, F ^a   McLelland, H ^a   Stanley, C R ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Delta doping; HEMT; InP; Non annealed; Self aligned

Indexed keywords

BUFFER STORAGE; DC GENERATORS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; LATTICE VIBRATIONS; MAGNETIC LEAKAGE; OHMIC CONTACTS; RADIOFREQUENCY SPECTROSCOPY; SCATTERING PARAMETERS; TRANSCONDUCTANCE; TRANSMISSION LINE THEORY; WAVEGUIDES;

DELTA DOPING; NON-ANNEALED OHMIC PROCESS; OHMIC METALLIZATION; PARASITIC RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2542478451     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00226-6     Document Type: Conference Paper

References (3)

1. Tasker P.J., Hughes B. IEEE Electron Device Letters. 10(7):1989;291.
2. Moran D., Boyd E., McLelland H., Elgaid K., Chen Y., Macintyre D.S., Thoms S., Stanley C.R., Thayne I.G. Microelectronic Engineering. 67-68:2003;769-774.
3. Yamashita Y., Endoh A., Shinohara K., Higashiwaki M., Hikosaka K., Mimura T., Hiyamizu S., Matsui T. IEEE Electron Device Letters. 22(8):2001;367-369.