Advantage and feasibility of immersion lithography

Journal of Microlithography, Microfabrication and Microsystems

Volumn 3, Issue 1, 2004, Pages 97-103

  Owa, Soichi ^a   Nagasaka, Hiroyuki ^a  

^a NIKON CORPORATION   (Japan)

Author keywords

Exposure tools; Feasibility studies; Imaging simulations; Immersion lithography

Indexed keywords

ELECTRIC FIELDS; IMAGE PROCESSING; OPTICAL RESOLVING POWER; POLARIZATION; PROJECTION SYSTEMS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; TOOLS;

EXPOSURE TOOLS; FEASIBILITY STUDIES; IMAGING SIMULATIONS; IMMERSION LITHOGRAPHY;

LITHOGRAPHY;

EID: 2542436874     PISSN: 15371646     EISSN: None     Source Type: Journal    
DOI: 10.1117/1.1637593     Document Type: Article

References (5)

1. M. Switkes and M. Rothschild, "Immersion lithography at 157 nm," J. Vac. Sci. Technol. B 19, 2353-2356 (2001).
2. B. J. Lin, "Semiconductor foundry, lithography, and partners," Proc. SPIE 4688, 11-24 (2002).
3. J. Burnett and S. Kaplan, "Measurement of the refractive index and thermo-optic coeficient of water near 193 nm," Proc. SPIE 5040, 1742-1749 (2003).
4. H. Kawai et al., "UV light source using fiber amplifier and nonlinear wavelength conversion," Proc. CLEO (Conference on Lasers and Electro Optics), CTuT4 (2003).
5. S. Owa and H. Nagasaka, "Immersion lithography; its potential performance and issues," Proc. SPIE 5040, 724-733 (2003).