The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 238, Issue 1-4, 2005, Pages 272-275

  Desnica, U V ^a   Dubcek, P ^a   Salamon, K ^b   Desnica Frankovic, I D ^a   Buljan, M ^a   Bernstorff, S ^c   Serincan, U ^d   Turan, R ^d  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b INSTITUTE OF PHYSICS   (Croatia)

^c SINCROTRONE TRIESTE   (Italy)

^d MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Ge; GISAXS; Implantation; Nanocrystals; Quantum dots; X ray scattering

Indexed keywords

ANNEALING; GERMANIUM; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICA; X RAY SCATTERING;

ANNEALING TEMPERATURE; GISAXS; IMPLANTATION; NANOCRYSTALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 25144491142     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.062     Document Type: Conference Paper

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