Special issue in honour of Prof. Marc Ilegems

Physica Status Solidi (B) Basic Research

Volumn 242, Issue 11, 2005, Pages 2153-2156

  Deveaud, Benoit ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 25144483422     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200590019     Document Type: Editorial

References (24)

1. M. Ilegems and G. L. Pearson, Derivation of the Ga-Al-As ternary phase diagram with applications to liquid phase epitaxy, in: Proc. 2nd Int. Symp. on GaAs (The Institute of Physics, London, 1969), p. 3.
2. M. Ilegems and G. L. Pearson, Infrared reflectance spectra of Al-Ga-As mixed crystals, Phys. Rev. B 1, 1576 (1970).
3. M. B. Panish and M. Ilegems, Phase equilibria in ternary III-V systems, in: Progress in Solid State Chemistry Vol. 7, edited by H. Reiss, J. O. Me Caldin (Pergamon Press, New York, 1972), p. 39.
4. A. S. Jordan and M. Ilegems, Solid-liquid equilibria for quaternary solid solutions in the regular solution approximation, J. Phys. Chem. Solids 36, 329 (1975).
5. M. Ilegems, Vapor phase epitaxy of GaN, J. Cryst. Growth 13/14, 360 (1972).
6. R. Dingle and M. Ilegems, Donor-acceptor pair recombination in GaN, Solid State Commun. 2, 175 (1971).
7. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Absorption, reflectance and luminescence of GaN epitaxial layers, Phys. Rev. B 4, 1211 (1971).
8. M. Ilegems and H. C. Montgomery, Electrical properties of n-type vapor grown GaN, J. Phys. Chem Solids 34, 885 (1973).
9. 0.7As, J. Appl. Phys. 48, 1278 (1977).
10. J. W. Robinson and M. Ilegems, Vacuum interlock for molecular beam epitaxy, Rev. Sci. Instrum. 49, 205 (1978).
11. W. T. Tsang and M. Ilegems, Selective area growth t of GaAs/Al-Ga-As multilayer structures wih molecular beam epitaxy using Si shadow masks, Appl. Phys. Lett. 31, 301 (1977).
12. J. P. Van der Ziel and M. Ilegems, Multilayer AlGaAs-GaAs dielectric quarterwave stacks grown by molecular beam epitaxy, Appl. Opt. 14, 2627 (1975).
13. A. Rudra, J. F. Carlin, P. Ruterana, M. Gailhanou, J. L. Staehli, and M. Ilegems, Growth of GaInAs(P) and GaInAsP/GaInAs multiple quantum well structures by CBE, J. Cryst. Growth 120, 338-342 (1992).
14. H. Sugiura, A. Rudra, J.-F. Carlin, H.-J. Bühlmann, D. Araujo, and M. Ilegems, Chemical Beam Epitaxy of InP, GaInAs and GaInAsP on non-planar InP substrates, Semicond. Sci. Microstruct. 8, 1063 (1993).
15. R. P. Stanley, R. Houdré, U. Oesterle, M. Gailhanou, and M. Ilegems, Ultrahigh finesse microcavity with distributed Bragg reflectors, Appl. Phys. Lett. 65, 1883-1885 (1994).
16. R. P. Stanley, R. Houdré, C. Weisbuch, U. Oesterle, and M. Ilegems, Cavity polariton photoluminescence in semiconductor microcavities: Experimental evidence, Phys. Rev. B 53, 10995-11007 (1996).
17. R. Houdré, R. P. Stanley, U. Oesterle, M. Ilegems, and C. Weisbuch, Room temperature cavity-polaritons in a semiconductor microcavity. Phys. Rev. B 49, 16761-16764 (1994).
18. R. Houdré, C. Weisbuch, R. P. Stanley, U. Oesterle, P. Pellandini, and M. Ilegems, Measurement of cavity-polariton dispersion curves from angle resolved photoluminescence experiments, Phys. Rev. Lett. 73, 2043-2046 (1994).
19. J.-F. Carlin, P. Royo, R. P. Stanley, R. Houdré, J. Spicher, U. Oesterle, and M. Ilegems, Design and characterization of top-emitting microcavity light-emitting diodes, Semicond. Sci. Technol. 15, 145-154 (2000).
20. R. P. Stanley, R. Houdré, U. Oesterle, M. Ilegems, and C. Weisbuch, Coupled semiconductor microcavities, Appl. Phys. Lett. 65, 2093-2095 (1994).
21. J.-F. Carlin, R. P. Stanley, P. Pellandini, U. Oesterle, and M. Ilegems, The dual wavelength coupled-vertical cavity surface-emitting laser, Appl. Phys. Lett. 75, 908-910 (1999).
22. V. Wagner, O. Parillaud, H. J. Buhlmann, and M. Ilegems, Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy, J. Appl. Phys. 92, 1307-1316 (2002).
23. J.-F. Carlin and M. Ilegems, High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN, Appl. Phys. Lett. 83, 668-670 (2003).
24. E. Feltin, R. Butté, J.-F. Carlin, J. Dorsaz, N. Grandjean, and M. Ilegems, High quality factor AlInN/GaN monolithic microcavity for the realization of 400-420 nm VCSELs, Electronics Lett. (2005).