High-pressure induced structural changes in metastable Ge 2Sb2Te5 thin films: An X-ray absorption study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 238, Issue 1-4, 2005, Pages 160-162

  Fons, P ^a   Kolobov, A V ^a   Tominaga, J ^a   Katayama, Y ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Ge Sb Te; High pressure; Optical memory; Structure; XAFS

Indexed keywords

CHEMICAL BONDS; GERMANIUM; LEAD; OPTICAL DATA STORAGE; TELLURIUM; X RAY SPECTROSCOPY;

GE-SB-TE; HIGH-PRESSURE; STRUCTURE; XAFS;

THIN FILMS;

EID: 25144465003     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.039     Document Type: Conference Paper

References (7)

1. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao J. Appl. Phys. 69 1991 2849
2. N. Yamada, and T. Matsunaga J. Appl. Phys. 88 2000 7020
3. A.V. Kolobov, P. Fons, A.I. Frenkel, A.L. Ankudinov, J. Tominaga, and T. Uruga Nat. Mater. 3 2004 703
4. J. Tominaga Top. Appl. Phys. 88 2003 1
5. J. Tominaga, T. Shima, M. Kuwahara, T. Fukaya, A. Kolobov, and T. Nakano Nanotechnology 15 2004 411
6. A.L. Ankudinov, and J.J. Rehr Phys. Rev. B 62 2000 2437
7. S. Endo, K. Deguchi, and M. Tokunaga J. Phys.: Condens. Matter. 14 2002 11275