Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 238, Issue 1-4, 2005, Pages 302-305

  Desnica Frankovic, I D ^a   Dubcek, P ^a   Buljan, M ^a   Furic, K ^a   Desnica, U V ^a   Bernstorff, S ^b   Karl, H ^c   Grosshans I ^c   Stritzker, B ^c  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b SINCROTRONE TRIESTE   (Italy)

^c UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Cd Se; GISAXS; Implantation; Nanocrystals; Quantum dots; X ray scattering

Indexed keywords

ION IMPLANTATION; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; X RAY SCATTERING; X RAYS;

CDSE; GISAXS; IMPLANTATION; NANOCRYSTALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 25144456533     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.067     Document Type: Conference Paper

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