Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 2, 2005, Pages 978-985

  Jhaveri, Tejas ^a   Cottle, Rand ^b   Zhang, Yuan ^b   Progler, Chris ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PHOTRONICS INC   (United States)

Author keywords

65nm; AAPSM; Intensity Imbalance; TESL; Undercut

Indexed keywords

65NM; AAPSM; INTENSITY IMBALANCE; TESL; UNDERCUT;

COMPUTER SIMULATION; ETCHING; OPTIMIZATION; STRATEGIC PLANNING; VECTORS;

PHOTOLITHOGRAPHY;

EID: 25144454397     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.593219     Document Type: Conference Paper

References (8)

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2. M.D. Levenson et al., "Improving resolution in Photolithography with a Phase-Shifting Mask," IEEE Transactions on Electron Devices, Vol. ED-29, No.12, pp. 1828-1836, 1982.
3. A. Kroyan and H.-Y. Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology," Proc. SPIE, Vol. 4889, 2002.
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5. M Cangemi et al, "Implementation of a transparent etch stop layer for an improved alternating PSM," Proceedings of SPIE, Vol. 5504, p 139, 2004
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7. T Jhaveri et al, "AAPSM Space Imbalance Reduction for 65nm Lithography", Microlithography World, Editor M. D. Levenson, Feb 2005 (submitted)
8. A. K. Wong, Resolution Enhancement Techniques in Optical Lithography, SPIE Press, Bellingham, WA (2001)