A physically-based analytic model for stress-induced hole mobility enhancement

Journal of Computational Electronics

Volumn 3, Issue 3-4, 2004, Pages 161-164

  Obradovic, Borna ^a   Matagne, Philippe ^a   Shifren, Lucian ^a   Wang, Everett ^a   Stettler, Mark ^a   He, Jun ^b   Giles, Martin D ^a  

^a INTEL CORPORATION   (United States)

^b Portland Technology Development   (United States)

Author keywords

Hole; Mobility; Strain; Stress

Indexed keywords

EID: 24944523404     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7037-x     Document Type: Article

References (4)

1. T. Ghani, IEDM 2003 Technical Digest, pp. 11.6.1-11.6.3
2. M. Fischetti et al., Journal of Applied Physics, 80 (4), 15 (1996). 10.1063/1.363052
3. M.D. Giles et al., in Proceedings of VLSI Symposium, p. 118.
4. L. Shifren et al., submitted to Applied Physics Letters