Accurate comparison on acceleration ability of electrons in SiO 2 with ZnS based on ZnS:Er phosphor

Materials Science and Engineering: B

Volumn 123, Issue 1, 2005, Pages 84-86

  Fujun, Zhang ^a   Zheng, Xu ^a,b   Feng, Teng ^a   Ling, Liu ^a   Lijian, Meng ^b  

^a BEIJING JIAOTONG UNIVERSITY   (China)

^b INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

Author keywords

Electrons acceleration; Rare earth Er; SSCL

Indexed keywords

CATHODOLUMINESCENCE; PHOSPHORS; ZINC SULFIDE;

ELECTRONS ACCELERATION; RARE EARTH ER; SINUSOIDAL VOLTAGE; SSCL;

SILICA;

EID: 24644503644     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.04.026     Document Type: Article

References (14)

1. A. Esteve, and M. Djafari Rouhani Comp. Mater. Sci. 24 2002 241 245
2. M.Y. Shen, and X.R. Xu Solid State commun. 72 1989 803 807
3. G. Lei, and X.R. Xu J. Soc. 137 1989 404 408
4. X.R. Xu, G. Lei, M.Y. Shen, and G.Z. Zhao J. Cryst. Growth 101 1990 1004 1007
5. G. Lei, M.Y. Shen, Z. Xu, and X.R. Xu J. Lumin. 48-49 1991 881 885
6. Xu Zheng, Teng Feng, and Qu Chong J. Rare Earth 17 2 1999 104 107
7. Xu Zheng, and Qu Chong J. Lumin. 102 2003 291 294
8. Qu Chong, Xu Zheng, and Teng Feng Chinese Phys. Lett. 20 7 2003 1144 1147
9. Xu Zheng Proceeding of the 11th International Conference on EL&IEL 425, Ghent Belgium 2002
10. A.S. Maifunin J. ACTA Opti. Sinica 18 2 1998 217 222 (Chinese)
11. Wang Yujiang, Chen Mouzhi, and Liu Zhaohong Semiconductor Photonic Technol. 7 2001 138 142
12. J. Marsh, L. Minel, and J. Barthe Appl. Surface Sci. 133 1998 270 286
13. L. Pavisi, M. Ceschini, and G. Mariotto J. Appl. Phys. 75 1994 1118 1121
14. P. Bhattacharya second ed. Semiconductor Optoelectronic Devices 1997 Prentice-Hall Englewood Cliffs, NJ pp. 283-287