Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 675-679

  Adriaenssens, G J ^a,b   Gheorghiu, A ^a   Senemaud C ^a   Qamhieh, N ^b   Bolle N ^b   Sleeckx, E ^c   Nagels, P ^c  

^a CNRS   (France)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY GAP; EVAPORATION; FERMI LEVEL; GERMANIUM COMPOUNDS; PHOTOCONDUCTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

DARK CONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; VALENCE BAND;

AMORPHOUS FILMS;

EID: 0030563402     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00003-8     Document Type: Article

References (11)

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