Application of the chemical vapor-etching in polycrystalline silicon solar cells

Applied Surface Science

Volumn 252, Issue 2, 2005, Pages 488-493

  Ben Rabha, M ^a   Saadoun, M ^a   Boujmil, M F ^a   Bessais B ^a   Ezzaouia, H ^a   Bennaceur, R ^a  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

Author keywords

Etching; Groove; Polycrystalline silicon; Porous silicon

Indexed keywords

CURRENT DENSITY; ETCHING; GRAIN BOUNDARIES; QUANTUM EFFICIENCY; SHORT CIRCUIT CURRENTS; SOLAR CELLS;

ACID VAPORS; CHEMICAL VAPOR-ETCHING (CVE); GROOVES; REAR-BURIED METALLIC CONTACTS (RBMC);

POLYSILICON;

EID: 24644486544     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.028     Document Type: Article

References (6)

1. L. Schirone, G. Sotgiu, M. Montecchi, and A. Parisini Proceedings of the 14th EC Photovoltaic Solar Energy Conference 1997 1479 1482
2. S. Strehlke, S. Bastide, and C. Lévy-Clément Sol. Energy Mater. Sol. Cells 58 1999 399
3. R.R. Bilyalov, R. Lüdermann, W. Wettling, L. Stalmans, J. Poortmans, J. Nijs, L. Schirone, G. Sotgiu, S. Strehlke, and C. Lévy-Clément Sol. Energy Mater. Sol. Cells 60 2000 391
4. M. Saadoun, N. Mliki, H. Kaabi, K. Daoudi, B. Bessaïs, H. Ezzaouia, and R. Bennaceur Thin Solid Films 405 2002 29
5. M. Saadoun, B. Bessaïs, N. Mliki, M. Ferid, H. Ezzaouia, and R. Bennaceur Appl. Surf. Sci. 210 2003 88
6. O. Porre, S. Martinuzzi, M. Pasquinelli, I. Perichaud, and N. Gay Proceedings of the Fifth IEEE Photovoltaic Specialists Conference Washington, DC 1996 629 632