Study on the resist materials leaching from resist film during immersion exposure for 193nm using QCM method

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5753, Issue II, 2005, Pages 778-789

  Sekiguchi, Atsushi ^a   Sensu, Yoshihisa ^a   Minami, Youichi ^a  

^a Litho Tech Japan Corporation   (Japan)

Author keywords

193nm immersion lithography; GC MS; QCM; Resist materials leaching

Indexed keywords

ARGON; CONTAMINATION; DISSOLUTION; GAS CHROMATOGRAPHY; LEACHING; LENSES; MASS SPECTROMETRY; PROBLEM SOLVING;

193NM IMMERSION LITHOGRAPHY; GC-MS; QCM; RESIST MATERIALS LEACHING;

PHOTORESISTS;

EID: 24644484040     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597003     Document Type: Conference Paper

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