Molecular dynamics simulation of ion implantation into HfO2 and HfO2/Si multi-layer structure

Chinese Physics Letters

Volumn 22, Issue 1, 2005, Pages 76-79

  Shi, Hao ^a   Yu, Min ^a   Huang, Ru ^a   Wang, Yang Yuan ^a   Suzuki, Kunihiro ^b   Oka, Hideki ^b  

^a PEKING UNIVERSITY   (China)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM OXIDES; ION IMPLANTATION; METALS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON OXIDES; SIMULATORS;

B IMPLANTATION; IONS IMPLANTATION; MOLECULAR DYNAMICS METHODS; MONTE CARLO SIMULATORS; MULTILAYER STRUCTURES; OXIDE THICKNESS; RANGE-PROFILES; SECONDARY ION MASS SPECTROSCOPY; SIO 2; SPECTROSCOPY DATA;

SILICA;

EID: 24644483127     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/1/022     Document Type: Article

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