Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays

Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 339-345

  Ding, G Q ^a   Shen, W Z ^a   Zheng, M J ^a   Xu, W L ^a   He, Y L ^a   Guo, Q X ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SAGA UNIVERSITY   (Japan)

Author keywords

A1. Nanocrystalline materials; A1. Nanoscale pattern formation; A2. Chemical vapor deposition; A3. Quantum dots

Indexed keywords

ALUMINA; CRYSTALLINE MATERIALS; DEPOSITION; HYDROGENATION; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS MATERIALS; REAL TIME SYSTEMS; SEMICONDUCTOR QUANTUM DOTS;

ARTIFICIAL QUANTUM DOT (AQD); NANOSCALE PATTERN FORMATION; NATURAL QUANTUM DOTS (NQD); STANDARD DEVIATION;

SEMICONDUCTING SILICON;

EID: 24644469548     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.06.052     Document Type: Article

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