A nanofactory by focused ion beam

Journal of Micromechanics and Microengineering

Volumn 15, Issue 10, 2005, Pages

  Fujii, Toshiaki ^a   Iwasaki, Koji ^a   Munekane, Masanao ^a   Takeuchi, Toshitada ^a   Hasuda, Masakatsu ^a   Asahata, Tatsuya ^a   Kiyohara, Masahiro ^a   Kogure, Toshiharu ^b   Kijima, Yukimitsu ^b   Kaito, Takashi ^a  

^a SII NANOTECHNOLOGY INC   (Japan)

^b SEIKO INSTRUMENTS INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM; ION BEAM ASSISTED DEPOSITION; MILLING MACHINES;

FOCUSSED ION BEAM (FIB); GAS ASSIST ETCHING; ION BEAM INDUCED DEPOSITION; NANO MILLING MACHINE;

ION BEAMS;

EID: 24644455497     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/15/10/S06     Document Type: Article

References (8)

1. Kaito T et al 1985 Mask repair using focused ion beam Proc. 9th Symp. on Ion Sources and Ion-Assisted Technology (Tokyo) pp 207-10
2. Mashiko Y et al 1987 A new VLSI diagnosis technique: focused ion beam assisted multi-level circuit probing Int. Reliability Physics Symp.
3. Nikawa K et al 1989 New applications of focused ion beam technique to failure analysis and process monitoring of VLSI Int. Reliability Physics Symp.
4. Nagase T et al 2003 Fabrication of nano-gap electrodes for measuring electrical properties of organic molecules using a focused ion beam Thin Solid Films 438-439 374-7
5. Matsui S et al 2000 Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition J. Vac. Sci. Technol. B 18 3181-4
6. Yamamoto T et al 2003 3D-nanoelectrodes for visualizing single molecular devices 7th Int. Conf. on Microminiaturized Chemical and Biological Systems (Squaw Valley, CA, 5 Oct.) pp 677-80
7. Hoshino T et al 2003 Development of three-dimensional pattern-generating system for focused-ion-beam chemical-vapor deposition J. Vac. Sci. Technol. B 21 2732-6
8. Mozerolle S et al 2004 High precision system for scanning electron microscopes 4th Int. Workshop of Microfactories (Shanghai, 15-17 Oct.) vol 1 pp 17-22